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ASUS Vivobook Go 14 (E1404FA-NK521WS) AMD Ryzen 5 Q... Upgrade Guide

Brand: ASUS | Model: E1404FA-NK521WS / NK5521WS

RAM: 8 GB Storage: 512 GB SSD

Hardware Specifications & Upgrade Analysis for ASUS E1404FA-NK521WS / NK5521WS

E1404FA-NK521WS / NK5521WS Memory Specs

RAM Technology LPDDR5 on board
RAM Slot Count 0 Slot(s)
DDR Type / Speed LPDDR5 - 5500 MHz
Max RAM Support 8
Upgradeable?

💾 E1404FA-NK521WS / NK5521WS SSD Expansion

SSD Slot Count 1 Slot(s)
Slot Type M.2 2280 NVMe PCIe 3.0
SSD Compatibility NVMe PCIe Gen3 (supports Gen4 drives at Gen3 speed
Max Storage Support 1024
Storage Upgradeable? 1

Overview & Compatibility Guidelines

Upgrading the memory and storage on your ASUS Vivobook Go 14 (E1404FA-NK521WS) AMD Ryzen 5 Quad Core 7520U (8 GB/512 GB SSD/Windows 11 Home) (E1404FA-NK521WS / NK5521WS) is one of the most effective methods to improve overall system responsiveness, multitasking performance, and boot speeds. Whether you utilize your laptop for content creation, heavy software development, or everyday computing, matching the correct RAM modules and SSD form factors is essential for optimal compatibility.

RAM Details for E1404FA-NK521WS / NK5521WS

This laptop supports up to 8 using LPDDR5 on board (LPDDR5 - 5500 MHz). If your machine features 1 slot(s), installing matching SODIMM RAM modules enables dual-channel memory mode, which significantly improves bandwidth and integrated graphics efficiency.

Storage Details for E1404FA-NK521WS / NK5521WS

The storage system offers expansion potential up to 1024 across 1 slot(s) supporting M.2 2280 NVMe PCIe 3.0 interface standards. Replacing standard mechanical drives with fast NVMe Solid State Drives dramatically accelerates file transfer speeds and operating system responsiveness.

ASUS Disassembly & Safety

Before attempting physical disassembly or component installation on your ASUS laptop, ensure you disconnect the power adapter and safely disconnect the internal battery connector. Always handle delicate electronic circuitry using anti-static protection to prevent electrostatic discharge damage.